Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
We present experimental results concerning a high density of structural defects
(in particular, dislocations) in the near-contact region of heavily doped n-silicon. They
appear in the course of firing Au Pd Ti Pd -Si n ...