Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за автором "Mishinova, G.N."

Результати 1-2 з 2

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
Silicon carbide phase transition in as-grown 3C-6H polytypes junction

Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...

Результати 1-2 з 2

Пошук