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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
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Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1
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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1 за датою випуску

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1 за датою випуску

Результати 1-20 з 21

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Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals

Bratus, O.L.; Evtukh, A.A.; Steblova, O.V.; Prokopchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the ...
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation

Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown ...
Search of mode wavelengths in planar waveguides by using Fourier transform of wave equation

Fitio, V.M.; Romakh, V.V.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The article describes a numerical method based on Fourier transform for studying propagating optical waves in dielectric planar waveguides. The inverse problem to the known direct one in waveguide investigation is proposed, ...
Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals

Pekar, G.S.; Singaevsky, А.А.; Singaevsky, А.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a ...
Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity

Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Olikh, Ya.M.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence ...
Features of tensoresistance in single crystals of germanium and silicon with different dopants

Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
Temperature effect on light polarization in uniaxial crystals

Kulish, M.R.; Litvinova, V.M.; Malysh, M.I.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial ...
Increasing the specularity of surface scattering of conduction electrons caused by adsorption of a hydrogen monolayer on the W(110) surface

Sologub, S.V.; Bordenyuk, I.V.; Kanash, O.V.; Amirov, R.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of ...
Optical properties of graphene film growing on a thin copper layer

Rozouvan, T.S.; Poperenko, L.V.; Kravets, V.G.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements. ...
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics ...
Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures

Iliash, S.A.; Kondratenko, S.V.; Yakovliev, A.S.; Kunets, Vas.P.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within ...
Electrical and optical parameters of Cu₆PS₅I-based thin films deposited using magnetron sputtering

Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
Speckle pattern formation in spatially limited optical systems

Kotov, M.M.; Kurashov, V.N.; Goloborodko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The dependences of statistical parameters inherent to speckle patterns on the object roughness and aperture size have been investigated. The experimental results that confirm theoretical dependence quality within the limits ...
Optimization of surface plasmon resonance based biosensor for clinical diagnosis of the Epstein–Barr herpes virus disease

Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

The influence of the sensitive element fabrication technology and noise performance of surface plasmon resonance (SPR) immunosensor on sensitivity and stability of operation inherent to the “Plasmon” series instrument has ...
Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods

Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
Electronic structure of 2H-SnSe₂: ab initio modeling and comparison with experiment

Bletskan, D.I.; Glukhov, K.E.; Frolova, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Energy band structure, total and local partial densities of states, spatial distribution of electronic density of 2H-SnSe₂ have been calculated using the densitym functional theory method in LDA and LDA+U approximations ...
Carbon ceramics from plants: Graphitization of biomorphic matrixes

Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

Ievtukh, V.A.; Ulyanov, V.V.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide ...

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