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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
Репозиторій DSpace/Manakin
- Домашня сторінка
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1
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Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals
Інший ID:
DOI: 10.15407/spqeo19.01.009
PACS 72.20.Ее, 73.63.Bd
PACS 72.20.Ее, 73.63.Bd
Посилання:
Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals / O.L. Bratus, A.A. Evtukh, O.V. Steblova, V.M. Prokopchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 9-13. — Бібліогр.: 11 назв. — англ.
Дата:
2016
Переглядів:
799
Завантажень:
443
Анотація:
The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the silicon nanoclusters embedded into insulating SiO₂ matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics, calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO₂(Si) films has been ascertained. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
