Перегляд за автором "Tetyorkin, V.V."

Сортувати за: Порядок: Результатів:

  • Carrier transport mechanisms in reverse biased InSb p-n junctions 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
  • Characterization of grain boundaries in CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
  • Conductivity type conversion in p-CdZnTe under pulsed laser irradiation 
    Tetyorkin, V.V.; Sukach, A.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region ...
  • Electrical properties of InSb p-n junctions prepared by diffusion methods 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
  • Heterostructure ohmic contacts to p-CdTe polycrystalline films 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case ...
  • Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions 
    Tetyorkin, V.V.; Sukach, A.V.; Tkachuk, A.I.; Movchan, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage ...
  • Investigation of Al-ZERODUR interface by Raman and secondary ion mass spectroscopy 
    Berezhinsky, L.I.; Yukhymchuk, V.A.; Maslov, V.P.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The interface of ZERODUR ceramics and thin aluminium film was investigated by Raman and secondary ion mass-spectroscopy techniques. Possible chemical reactions at the interface is briefly analyzed and compared with ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • Mechanisms of carrier transport in CdTe polycrystalline films 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average ...
  • Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes 
    Ivasiv, Z.F.; Sizov, F.F.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to ...
  • Photoluminescence studies of CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Stariy, S.V.; Boiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...