Carrier transport mechanisms in reverse biased InSb p-n junctions

Abstract

Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data.