Перегляд за автором "Strelchuk, V.V."

Сортувати за: Порядок: Результатів:

  • Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study 
    Strelchuk, V.V.; Kladko, V.P.; Yefanov, O.M.; Kolomys, O.F.; Gudymenko, O.I.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid ...
  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties 
    Bortchagovsky, E.G.; Vasin, A.V.; Lytvyn, P.M.; Tiagulskyi, S.I.; Slobodian, A.M.; Verovsky, I.N.; Strelchuk, V.V.; Stubrov, Yu.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that ...
  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies 
    Strelchuk, V.V.; Bryksa, V.P.; Avramenko, K.A.; Lytvyn, P.M.; Valakh, M.Ya.; Pashchenko, V.O.; Bludov, O.M.; Deparis, C.; Morhain, C.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and ...
  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...
  • Mechanism of AlN film formation at thermochemical nitridization of sapphire 
    Kaltaev, Kh.Sh.-ogly; Nizhankovskiy, S.V.; Sidelnikova, N.S.; Rom, M.A.; Dan'ko, A.Ya.; Dobrotvorskaya, M.V.; Belyaev, A.Ye.; Strelchuk, V.V.; Kolomys, A.F. (Functional Materials, 2011)
  • Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition 
    Strelchuk, V.V.; Kolomys, O.F.; Golichenko, B.O.; Boyko, M.I.; Kaganovich, E.B.; Krishchenko, I.M.; Kravchenko, S.O.; Lytvyn, O.S.; Manoilov, E.G.; Nasieka, Iu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanocomposite porous films with silver nanoparticle (Ag NP) arrays were prepared by the pulsed laser deposition from the back flux of erosion torch particles in argon atmosphere on the substrate placed at the target plane. ...
  • Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties 
    Borblik, V.L.; Korchevoi, A.A.; Nikolenko, A.S.; Strelchuk, V.V.; Fonkich, A.M.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface ...
  • Phase transitions in the nanopowders KTa₀.₅Nb₀.₅O₃ studied by Raman spectroscopy 
    Golovina, I.S.; Bryksa, V.P.; Strelchuk, V.V.; Geifman, I.N. (Functional Materials, 2013)
    Raman spectra of KTa₀.₅Nb₀.₅O₃ nanopowder solid solution were obtained at the temperatures from –190°C to 600°C and investigated for the first time. The compound was synthesized by a new technology. Temperature dependences ...
  • Photoluminescence of As₂S₃ doped with Cr and Yb 
    Stronski, A.V.; Paiuk, O.P.; Strelchuk, V.V.; Nasieka, Iu.M.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The results of experimental researches of photoluminescence spectra in As₂S₃ glasses obtained by doping of Cr and Yb ions to As–S host matrix followed by Raman and calorimetric studies as well as low-temperature magnetization ...
  • Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules 
    Dvoynenko, M.M.; Kazantseva, Z.I.; Strelchuk, V.V.; Kolomys, O.F.; Bortshagovsky, E.G.; Venger, E.F.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The simultaneous measurement of Raman and fluorescence signals was proposed to find out the molecule-metal distance. The ratio between Raman and fluorescence intensities was used to estimate molecule-metal distance in ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization 
    Naumov, A.V.; Kolomys, O.F.; Romanyuk, A.S.; Tsykaniuk, B.I.; Strelchuk, V.V.; Trius, M.P.; Avksentyev, A.Yu.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...
  • Vibrational states of hexagonal ZnO doped with Co 
    Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...