Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3
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Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures

Valakh, M.Ya. ; Strelchuk, V.V. ; Kolomys, O.F. ; Hartnagel, H.L. ; Sigmund, J.

Інший ID: PACS: 63.22.+m, 72.10.Di, 78.30.-j

URI: http://dspace.nbuv.gov.ua/handle/123456789/118031

Посилання: Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ.

Дата: 2003

Завантажень: 585

Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures

Анотація:

Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy.

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