Перегляд за автором "Shepeliavyi, P.E."

Сортувати за: Порядок: Результатів:

  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures 
    Indutnyi, I.Z.; Michailovska, K.V.; Min’ko, V.I.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by ...
  • Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films 
    Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films 
    Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • High-speed optical recording in vitreous chalcogenide thin films 
    Kryuchyn, A.A.; Petrov, V.V.; Rubish, V.M.; Lapchuk, A.S.; Kostyukevych, S.O.; Shepeliavyi, P.E.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin films of glassy chalcogenide semiconductor are widely used as recording media in optical data storage. To obtain relief micro- and nanoscale structures on the surface of optical master discs inorganic photoresists ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images 
    Girnyk, V.I.; Kostyukevich, S.A.; Shepeliavyi, P.E.; Kononov, A.V.; Borisov, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This work deals with Computer-Generated Rainbow Holograms (CGRHs), which can restore the 3D images under white light. They are devoted to include in Diffractive Optically Variable Image Devices (DOVIDs) that are currently ...
  • Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist 
    Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures 
    Michailovska, K.V.; Indutnyi, I.Z.; Shepeliavyi, P.E.; Dan’ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral ...
  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Optical study of thermally induced phase separation in evaporated SiOx films 
    Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...
  • Paramagnetic defects related to photoluminescence in SiOx films 
    Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Photostimulated etching of germanium chalcogenide films 
    Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...
  • Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device 
    Chegel, V.I.; Lytvyn, V.K.; Lopatynskyi, A.M.; Shepeliavyi, P.E.; Lytvyn, O.S.; Goltvyanskyi, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, we describe a method of surface-enhanced fluorometry, based on the phenomenon of localized surface plasmon resonance in unordered gold nanostructure arrays. The theoretical approach for the model system “gold ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix 
    Michailovska, K.V.; Indutnyi, I.Z.; Kudryavtsev, O.O.; Sopinskyy, M.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation ...
  • Raman spectra of Ag- and Cu- photodoped chalcogenide films 
    Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...
  • Recording of high efficiency diffraction gratings by He-Ne laser 
    Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...