Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1
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Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

Lisovskyy, I.P. ; Litovchenko, V.G. ; Zlobin, S.O. ; Voitovych, M.V. ; Khatsevich, I.M. ; Indutnyy, I.Z. ; Shepeliavyi, P.E. ; Kolomys, O.F.

Інший ID: PACS 68.55.Ln, 78.30.Ap, 81.40.Ef

URI: http://dspace.nbuv.gov.ua/handle/123456789/117655

Посилання: Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ.

Дата: 2011

Завантажень: 451

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films

Анотація:

The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed.

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