Перегляд за автором "Okhrimenko, O.B."

Сортувати за: Порядок: Результатів:

  • A model for non-thermal action of microwave radiation on oxide film/semiconductor structures 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination ...
  • Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V.; Kidalov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material ...
  • Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures 
    Bacherikov, Yu.Yu.; Konakova, R.V.; Kolyadina, E.Yu.; Kocherov, A.N.; Okhrimenko, O.B.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO₂/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of ...
  • Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Okhrimenko, O.B.; Kardashov, D.L.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Photo- and electroluminescence properties of ZnS obtained using selfpropagating high-temperature synthesis and doped with Cu were studied in this work. It has been shown that high-temperature one-stage synthesis enables ...
  • Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis 
    Bacherikov, Yu.Yu.; Okhrimenko, O.B.; Zhuk, A.G.; Kurichka, R.V.; Gilchuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and ...
  • Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films 
    Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment 
    Konakova, R.V.; Kladko, V.P.; Lytvyn, O.S.; Okhrimenko, O.B.; Konoplev, B.G.; Svetlichnyi, A.M.; Lissotschenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure ...
  • Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x 
    Sapaev, B.; Saidov, A.S.; Bacherikov, Yu.Yu.; Konakova, R.V.; Okhrimenko, O.B.; Dmitruk, I.N.; Galak, N.P.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed ...
  • The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis 
    Bacherikov, Yu.Yu.; Zhuk, A.G.; Optasyuk, S.V.; Okhrimenko, O.B.; Kardashov, K.D.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the ...
  • Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, ...