Перегляд за автором "Kondratenko, S.V."

Сортувати за: Порядок: Результатів:

  • Influence of gas adsorption on the impedance of porous GaAs 
    Milovanov, Y.S.; Gavrilchenko, I.V.; Kondratenko, S.V.; Oksanich, A.P.; Pritchin, S.E.; Kogdas, M.G. (Functional Materials, 2017)
    Porous GaAs was formed electrochemically on n-type GaAs in a HF:C₂H₅OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance ...
  • Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface 
    Melnichuk, Ye.Ye.; Hyrka, Yu.V.; Kondratenko, S.V.; Kozyrev, Yu.N.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It ...
  • Photoresponse in Ge/Si nanostructures with quantum dots 
    Nikolenko, A.S.; Kondratenko, S.V.; Vakulenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed ...
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • Quantum effects in multilayer Si-Ge nanoheterostructures 
    Kozyrev, Yu.N.; Rubezhanska, M.Yu.; Sushyі, A.V.; Kondratenko, S.V.; Vakulenko, O.V.; Dadykin, A.A.; Naumovets, A.G. (Поверхность, 2008)
    The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in ...
  • Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) 
    Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term ...
  • Some features of polarization modulation in spectroscopy of optical and photoelectric effects 
    Kondratenko, S.V.; Matyash, I.A.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We analyze usage of modulation of electromagnetic radiation polarization in investigations of optical and photoelectric effects in anisotropic crystals. It is shown that when transmission spectra are studied with the ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • The influence of non-uniform deformation on photoelectric properties of crystalline silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the ...
  • Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures 
    Iliash, S.A.; Kondratenko, S.V.; Yakovliev, A.S.; Kunets, Vas.P.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within ...
  • The spatial separation of electron-hole pairs in Si/Ge heterostructures 
    Lysenko, V.S.; Kondratenko, S.V.; Melnichuk, Ye.Ye.; Terebinska, M.I.; Tkachuk, O.I.; Kozyrev, Yu.N.; Lobanov, V.V. (Поверхность, 2015)
    Photogeneration and transport of nonequilibrium charge carriers, and the determination of photoresponce mechanisms in semiconductor SiGe/Si and SiGe/SiO₂/p-Si heterostructures with nanoisland were investigated. The structures ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...