Перегляд за автором "Kolomys, O.F."

Сортувати за: Порядок: Результатів:

  • Strelchuk, V.V.; Kladko, V.P.; Yefanov, O.M.; Kolomys, O.F.; Gudymenko, O.I.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid ...
  • Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics ...
  • Strelchuk, V.V.; Kolomys, O.F.; Golichenko, B.O.; Boyko, M.I.; Kaganovich, E.B.; Krishchenko, I.M.; Kravchenko, S.O.; Lytvyn, O.S.; Manoilov, E.G.; Nasieka, Iu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanocomposite porous films with silver nanoparticle (Ag NP) arrays were prepared by the pulsed laser deposition from the back flux of erosion torch particles in argon atmosphere on the substrate placed at the target plane. ...
  • Frolova, E.K.; Khomych, V.O.; Kravchuk, R.M.; Kolomys, O.F.; Gudenko, Yu.M.; Pylypchuk, O.S.; Styopkin, V.I.; Dobrovolskiy, A.M. (Problems of Atomic Science and Technology, 2023)
    The results of the treatment of TiO₂ film in volume discharge with an Ar/H₂ mixture are presented. The treated film demonstrates the changes in transparency and conductivity. Raman spectra show no changes in the phase state ...
  • Dvoynenko, M.M.; Kazantseva, Z.I.; Strelchuk, V.V.; Kolomys, O.F.; Bortshagovsky, E.G.; Venger, E.F.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The simultaneous measurement of Raman and fluorescence signals was proposed to find out the molecule-metal distance. The ratio between Raman and fluorescence intensities was used to estimate molecule-metal distance in ...
  • Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Naumov, A.V.; Kolomys, O.F.; Romanyuk, A.S.; Tsykaniuk, B.I.; Strelchuk, V.V.; Trius, M.P.; Avksentyev, A.Yu.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for ...