Моделирование процессов бесконтактного химикомеханического изготовления подложек полупроводников

Abstract

Разработана физическая модель операций бесконтактного химико-механического полирования и химической резки. Получены аналитические выражения, связывающие геометрию образованной поверхности и скорость обработки с физическими параметрами протекающих процессов. Это позволяет использовать результаты работы при разработке травящих растворов и выборе оптимальных технологических режимов операций бесконтактного безабразивного передела слитков для получения полупроводниковых подложек.

The physical model for the non-contact operations of chemo-mechanical polishing and chemical cutting which are used in a process engineering of manufacture of semiconductor substructures was developed The analytical expressions which are connecting geometry of a formed surface and a velocity of handling to physical parameters of flowing past processes was obtained. It was established that a macro-relief of the treated surface was depended only on a speed of relative moving of the tool and a treated specimen, a distance between the pad and the specimen and a diffusion coefficient of active component in etching solution. The velocity of shaping essentially depends on concentration of an active component of an etchant, chemical reaction, physical properties of substance of the sample and etchant. The theoretical and experimental dependencies was revealed the potentially large reserves of a raise of a velocity polishing and chemical cutting. The comparison of experimental dependencies of treated samples InSb, HgCdTe with theoretical expressions has shown their qualitative and good quantitative co-ordination. It is allows to use outcomes of work by development an etchant and choice of optimum technological conditions for the operations of non-contact treatment of ingots for manufacture of semiconductor substructures.