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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

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  • Liquid crystal modulator in the channel of a laser projection microscope 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Using the light modulator based on electrically controlled reflection in the interface between isotropic dielectric and nematic liquid crystal has been viewed. The optical scheme of a laser projection microscope (LPM) with ...
  • Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions 
    Deibuk, V.G.; Korolyuk, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. ...
  • Localized surface plasmon resonance in Au nanoprisms on glass substrates 
    Lopatynska, O.G.; Lopatynskyi, A.M.; Borodinova, T.I.; Chegel, V.I.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Metal nanocrystals are actual objects for the modern biophysics mainly because of their usage in sensors based on localized surface plasmon resonance (LSPR) and as active substrates for surface-enhanced spectroscopies. ...
  • Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface 
    Mamykin, S.; Dmitruk, N.; Korovin, A.; Naumenko, D.; Dmytruk, A.; Park, Yeon-Su (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Au/SiO₂ core-shell nanoparticles have been used to increase the photocurrent in the surface barrier structure Au/GaAs. The method for theoretical calculation of interaction between light and the system of ordered ...
  • Local properties of impurity and defects investigated by high pressure spectroscopy 
    Grinberg, Marek (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ...
  • Local vibrational density of states in disordered graphene 
    Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Long-term radiation-induced optical darkening effects in chalcogenide glasses 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical ...
  • Long-wave light sensitivity of a thin film system based on PbI₂ and Cu 
    Sopinskyy, M.V.; Mynko, V.I.; Olkhovik, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Photostimulated interaction in a sandwich-like thin film system based on PbI₂ and Cu (photodoping effect) makes it possible to use the system as a recording medium. On the other hand, since the layer consisting of copper ...
  • Low doses effect in GaP light-emitting diodes 
    Hontaruk, O.M.; Konoreva, O.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Radkevych, O.I.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of ...
  • Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) 
    Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
  • Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers 
    Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, E.; Claeys, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that ...
  • Low-temperature deposition of silicon dioxide films in high-density plasma 
    Yasunas, A.; Kotov, D.; Shiripov, V.; Radzionay, U. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides ...
  • Low-temperature growth of diamond films using supersonic DC arcjet 
    Romanyuk, A.; Gottler, H.; Popov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of ...
  • Low voltage FLC for fast active matrix displays 
    Andreev, A.; Andreeva, T.; Kompanets, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The process of FLC director reorientation in alternating electric field is considered for the case when interaction of FLC molecules with the substrates results in partial unwinding the helix structure and motion of ...
  • Luminescence and photoconductivity of poly-n-epoxypropylcarbazole with intramolecular charge transfer compounds 
    Davidenko, N.A.; Kuvshinsky, N.G.; Syromiatnikov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Features of charges photogeneration in the films of poly-N-epoxypropylcarbazole doped with compounds with intramolecular charge transfer used in holographic recording media are investigated. Influence of an external electric ...
  • Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals 
    Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
  • Luminescence of the pyrazoline dye in nanostructured zeolite matriх 
    Beliak, I.V.; Kravets, V.G.; Kryuchin, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A physicotechnical fundamental of the multilayer photoluminescent media development has been considered. The quantum yield and relaxation time of luminescence were found as most significant values of the recording material. ...
  • Luminescence properties of KAlP₂O₇ crystals doped with chromium ions 
    Gomenyuk, O.V.; Nedilko, S.G.; Stus, N.V.; Chukova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Luminescence properties of the KAlP₂O₇ crystals doped with the chromium ions were investigated. Luminescence spectra consist of two main bands: one of them lies in the blue-green spectral region and the other lies in the ...
  • Luminescent converter of solar light into electrical energy. Review 
    Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis 
    Bacherikov, Yu.Yu.; Zelensky, S.E.; Zhuk, A.G.; Semenenko, N.A.; Krylova, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Fine-dispersed ZnS doped with Cu was prepared using self-propagating hightemperature synthesis. In the photoluminescence excitation spectra, the blue shift of the host lattice excitation peak is observed for powder ZnS:Cu ...

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