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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Calculation of the spectra of characteristic electron losses in indium bromide 
    Kolinko, M.O.; Bovgyra, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy ...
  • Can nanoparticles be useful for antiviral therapy? 
    Lozovski, V.; Lysenko, V.; Pyatnitsia, V.; Spivak, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this paper, optical properties of the system consisting of mesoparticles (small dielectric particles) and nanoparticles (quantum dots) of various shapes have been considered. This system can be characterized by resonant ...
  • Capacitance spectroscopy of InAs self-assembled quantum dots 
    Martin, P.M.; Belyaev, A.E.; Eaves, L.; Main, P.C.; Sheard, F.W.; Ihn, T.; Henini, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Capacitance spectroscopy is used to study electronic properties of self-assembled InAs quantum dots. The capacitance-voltage, C(V), measurements in combination with the magneto-capacitance, C(B), results make it possible ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics 
    Osinsky, V.I.; Masol, I.V.; Lyahova, N.N.; Deminsky, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of ...
  • Carbon ceramics from plants: Graphitization of biomorphic matrixes 
    Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
  • Carrier transport mechanisms in InSb diffusion p-n junctions 
    Sukach, A.; Tetyorkin, V.; Voroschenko, A.; Tkachuk, A.; Kravetskii, M.; Lucyshyn, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures ...
  • Carrier transport mechanisms in reverse biased InSb p-n junctions 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
  • CdSe nanoparticles grown with different chelates 
    Bacherikov, Yu.Yu.; Davydenko, M.O.; Dmytruk, A.M.; Dmitruk, I.M.; Lytvyn, P.M.; Prokopenko, I.V.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Modified reverse micelles method allowing fabrication of CdSe nanoparticles in toluene solution in series of sizes with average diameter from 1.2 to 3.2 nm and size distribution ∼ 12-30 % is presented. Simple empirical ...
  • CdTe quantum dots precipitation of monodisperse fractions from colloid solutions 
    Savchuk, O.A.; Trishchuk, L.I.; Mazarchuk, I.A.; Tomashik, V.M.; Tomashik, Z.F.; Dimitriev, O.P.; Boruk, S.D.; Kapush, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    CdTe nanocrystals were prepared in aqueous solution by the reaction between Cd²⁺ and H₂Te, obtained electrochemically in a galvanostatic cell, in the presence of thioglycolic acid. Subsequently, we have investigated ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing 
    Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching ...
  • Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings ...
  • Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial ...
  • Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields 
    Steblenko, L.P.; Kurylyuk, A.N.; Koplak, O.V.; Krit, O.N.; Tkach, V.N.; Naumenko, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the ...
  • Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field 
    Trachevsky, V.V.; Steblenko, L.P.; Demchenko, P.Y.; Koplak, O.V.; Kuryliuk, A.M.; Melnik, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral ...
  • Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition 
    Andriyevsky, B.V.; Romanyuk, M.O.; Dumka, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependences of the linear dimension L(T) and the optical path difference D(T) of the ferroelectric diglycine nitrate crystals, (NH₂CH₂COOH)₂ HNO₃, have been measured for three principal directions of optical ...
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region 
    Borblik, V.L.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Heavily doped silicon diodes of n⁺⁺-p⁺ type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as ...
  • Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters 
    Sarikov, A.; Naseka, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A ...

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