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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators 
    Ahmad, Ibrahim; Ho, Yeap Kim; Majlis, Burhanuddin Yeop (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A 0.14 µm CMOS transistor with two levels of interconnection was designed and simulated to investigate its functionality and characteristics. ATHENA and ATLAS simulators were used to simulate the fabrication process and ...
  • Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell 
    Hashim, U.; Ayub, R.M.; On, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. ...
  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • Factor of interfacial potential for the surface plasmon-polariton resonance sensor response 
    Lopatynskyi, A.M.; Lopatynska, O.G.; Poperenko, L.V.; Chegel, V.I.; Guiver, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this work, we investigate how the application of an external potential difference to the sensitive gold-electrolyte interface influences the optical response of a sensor based on the surface plasmon-polariton resonance ...
  • Features of a shock wave in CdTe by pulsed laser irradiation 
    Dauletmuratov, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Analyzed on the example of CdTe are formation and propagation of shock waves during pulsed laser irradiation of a solid surface. It is shown that before the appearance of a shock wave in a solid, a gradual increase in ...
  • Features of Auger-emission in channeling 
    Kossko, I.A.; Denisov, A.Ye. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) ...
  • Features of conduction electrons motion in the field of coherent light beams 
    Semchuk, O.Yu.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Conduction electrons moving in a non-homogeneous field of coherent light beams (CLB) are investigated. It is shown that a conduction electron simultaneously takes part in two oscillations. More exactly, an electron oscillate ...
  • Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells 
    Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the ...
  • Features of electrical charge transfer in porous silicon 
    Monastyrskii, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The thermostimulated depolarization (TSD) spectra of porous silicon (PS) in the range of temperatures 77 - 450 K were investigated. Several wide bands of TSD current with different values referred to different types of PS ...
  • Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides 
    Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
  • Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry 
    Chuiko, G.P.; Dvornik, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The so-called loops of extremes exist for the modification of Cd₂As₂ without the center of symmetry. The maximal spin splitting of bands is observable along a direction normal to the main crystalline axis. The number of ...
  • Features of optical properties of ferromagnetic semiconductors with dynamic laser-induced gratings 
    Semchuk, O.Yu.; Veskliarskii, R.Z.; Kosharskii, K.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Nonlinear optical phenomena in ferromagnetic semiconductor with dynamic grating created by coherent light beams are investigated. A high-frequency current and nonlinear absorption coefficient are calculated. It is shown ...
  • Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co 
    Davidenko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical ...
  • Features of piezoresistance in heavily doped n-silicon crystals 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not ...
  • Features of tensoresistance in single crystals of germanium and silicon with different dopants 
    Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
  • Features of the development of LED spotlight for local illumination of extended objects 
    Kudrautsau, K.A.; Kernazhytski, Y.V.; Tsvirka, V.I.; Trofimov, Yu.V.; Posedko, V.S.; Posedko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The peculiarities of extra narrow-angle LED spotlight development for accent lighting have been described. The optical layout of lighting fixture was developed. The mathematical model that can be used to calculate the ...
  • Features of the super prism effect in multilayer dielectric coatings 
    Pervak, Yu.A.; Onitchuk, V.M.; Pervak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We demonstrate that the strong change of reflected beam intensity in the spectral range of the super-prism effect not allow to use periodic multilayer coatings as effective wavelength division multiplexing devices. But ...
  • Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies 
    Strelchuk, V.V.; Bryksa, V.P.; Avramenko, K.A.; Lytvyn, P.M.; Valakh, M.Ya.; Pashchenko, V.O.; Bludov, O.M.; Deparis, C.; Morhain, C.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)- sapphire substrates. Magnetic force microscopy (MFM) and ...
  • Ferromagnetism induced in diluted A₁₋xMnxB semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) ...
  • Field emission of electrons from laser produced silicon tip arrays 
    Evtukh, A.A.; Kaganovich, E.B.; Litovchenko, V.G.; Litvin, Yu.M.; Fedin, D.V.; Manoilov, E.G.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The new preparation method of silicon tips with nanocomposite structure, namely laser modification of silicon is developed. The laser direct-write process has been applied, one by one (single) laser pulses formed the single ...

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