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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Cadmium phosphide as a new material for infrared converters 
    Stepanchikov, D.; Shutov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact ...
  • Calculated images of dislocations in crystals on section topograms 
    Novіkov, S.M.; Fodchuk, І.M.; Fedortsov, D.G.; Struk, A.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations ...
  • Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter 
    Rashid Nizam; S. Mahdi A. Rizvi; Ameer Azam (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Transmission of twenty-four carbon nanotube geometries to form twelve intramolecular junctions between every two carbon nanotubes have been investigated numerically. The twelve carbon nanotubes are zigzag and rest carbon ...
  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Calculation of electron mobility and effect of dislocation scattering in GaN 
    Kundu, J.; Sarkar, C.K.; Mallick, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important ...
  • Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films 
    Kosyak, V.V.; Opanasyuk, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on ...
  • Calculation of the metal reflectivity with taking polarization into consideration 
    Vakulenko, O.V.; Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical properties of free electrons in the conduction band of metal are considered. It is shown that the conventional Drude theory does not take shielding of the external electrical field by mobile electrons into account. ...
  • Calculation of the spectra of characteristic electron losses in indium bromide 
    Kolinko, M.O.; Bovgyra, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, the fundamental optical functions of single crystals of layered indium bromide are calculated on the basis of polarization-dependent reflection spectra at the liquid helium temperature in the energy ...
  • Can nanoparticles be useful for antiviral therapy? 
    Lozovski, V.; Lysenko, V.; Pyatnitsia, V.; Spivak, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In this paper, optical properties of the system consisting of mesoparticles (small dielectric particles) and nanoparticles (quantum dots) of various shapes have been considered. This system can be characterized by resonant ...
  • Capacitance spectroscopy of InAs self-assembled quantum dots 
    Martin, P.M.; Belyaev, A.E.; Eaves, L.; Main, P.C.; Sheard, F.W.; Ihn, T.; Henini, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Capacitance spectroscopy is used to study electronic properties of self-assembled InAs quantum dots. The capacitance-voltage, C(V), measurements in combination with the magneto-capacitance, C(B), results make it possible ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics 
    Osinsky, V.I.; Masol, I.V.; Lyahova, N.N.; Deminsky, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of ...
  • Carbon ceramics from plants: Graphitization of biomorphic matrixes 
    Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
  • Carrier transport mechanisms in InSb diffusion p-n junctions 
    Sukach, A.; Tetyorkin, V.; Voroschenko, A.; Tkachuk, A.; Kravetskii, M.; Lucyshyn, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures ...
  • Carrier transport mechanisms in reverse biased InSb p-n junctions 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
  • CdSe nanoparticles grown with different chelates 
    Bacherikov, Yu.Yu.; Davydenko, M.O.; Dmytruk, A.M.; Dmitruk, I.M.; Lytvyn, P.M.; Prokopenko, I.V.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Modified reverse micelles method allowing fabrication of CdSe nanoparticles in toluene solution in series of sizes with average diameter from 1.2 to 3.2 nm and size distribution ∼ 12-30 % is presented. Simple empirical ...
  • CdTe quantum dots precipitation of monodisperse fractions from colloid solutions 
    Savchuk, O.A.; Trishchuk, L.I.; Mazarchuk, I.A.; Tomashik, V.M.; Tomashik, Z.F.; Dimitriev, O.P.; Boruk, S.D.; Kapush, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    CdTe nanocrystals were prepared in aqueous solution by the reaction between Cd²⁺ and H₂Te, obtained electrochemically in a galvanostatic cell, in the presence of thioglycolic acid. Subsequently, we have investigated ...
  • Change of carrier spectrum in layer semiconductors caused by strong electromagnetic wave field 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectrum of carriers in layer semiconductors under action of strong electromagnetic field is analyzed. It is shown that obtained modification of the spectrum qualitatively differs from modification in analogous problem in ...
  • Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing 
    Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching ...
  • Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings ...

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