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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Generation of optical vortices in rotating uniaxial crystal for light propagation along the perpendicular to its optical axis 
    Sokolenko, B.V.; Rubass, A.F.; Volyar, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have experimentally considered evolution of the Gaussian beam propagating nearly perpendicular to the uniaxial crystal axis. Also we have analyzed the spin and orbital angular momenta and found oscillations of the ...
  • Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in ...
  • Ge/Si heterojunction photodetector for 1.064 μm laser pulses 
    Ismail, Raid A.; Koshapa, Jospen; Abdulrazaq, Omar A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 ...
  • Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system 
    Halyan, V.V.; Shevchuk, M.V.; Davydyuk, G.Ye.; Voronyuk, S.V.; Kevshyn, A.H.; Bulatetsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined ...
  • Gold and colloidal gold surface influence on dna conformational change 
    Dovbeshko, G.I.; Gnatyuk, O.P.; Chegel, V.I.; Shirshov, Y.M.; Kosenkov, D.V.; Andreev, E.A.; Tajmir-Riahi, H.A.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    DNA conformational changes caused by gold and colloidal gold surface have been studied by surface enhanced infrared spectroscopy (SEIRA), spectroscopy of plasmon resonance (SPR), atomic force microscopy (AFM) and principal ...
  • Graded-gap AlInN Gunn diodes 
    Storozhenko, I.P.; Yaroshenko, A.N.; Kaydash, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. ...
  • Graded refraction index antireflection coatings based on silicon and titanium oxides 
    Abdelhakim Mahdjoub (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two ...
  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • Grating and plasmon resonances in the scattering of light by finite silver nanostrip gratings 
    Shapoval, O.V.; Sauleau, R.; Nosich, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We study numerically the H-polarized wave scattering by finite flat gratings of N silver nanostrips in free space in the context of co-existence of surface plasmon resonances (SPR) and periodicity-induced grating resonances ...
  • Group delay investigation of N-order chirping mirrors 
    Lysak, V.V.; Sukhoivanov, I.A.; Petrov, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We present the numerical calculation of N-order chirping mirrors with chirping both high and low refractive index layers using the transfer matrix method. The group delay and group delay dispersion are investigated for ...
  • Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum 
    Gritsook, B.N.; Fodchoock, I.M.; Nichiy, S.V.; Paranchich, U.S.; Politanskiy, R.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown ...
  • Growing Cd₁₋x₋yMnyHgxTe single crystals and their optoelectronic properties 
    Paranchych, S.Yu.; Paranchych, L.D.; Tanasyuk, Yu.V.; Romanyuk, V.R.; Makogonenko, V.M.; Yurtsenyuk, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single crystals of Cd₁₋x₋yMnyHgxTe:V (х = 0.05; у = 0.03-0.07, NV = 1∙10¹⁹ cm⁻³) have been grown and their electrical and optical properties have been studied. The transmission spectra of the samples with the composition ...
  • Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy 
    Rogozin, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen ...
  • Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase 
    Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in ...
  • Growth and linear optical properties of CuCl nanocrystals 
    Mahtout, S.; Belkhir, M.A.; Samah, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Linear optical properties of CuCl nanocrystals in a NaCl matrix have been studied using optical absorption, cathodoluminescence and X-ray diffraction measurements. Our measurements showed that CuCl nanocrystals were really ...
  • Growth and optical properties of dye films and dye-in-polymer matrix deposited by vacuum evaporation 
    Grytsenko, K.; Doroshenko, T.; Kolomzarov, Yu.; Lytvyn, O.; Serik, M.; Tolmachev, O.; Slominski, Yu.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Searching new more effective materials for organic electroluminescent displays is continuing. The polymethine dyes is a class of organic materials that are very interesting for these purposes. Films of the polymethine ...
  • Growth conditions influence on thermally stimulated luminescence of sapphire single crystals 
    Blonskyy, I.V.; Vakhnin, A.Yu.; Danko, A.Ya.; Kadashchuk, A.K.; Kadan, V.N.; Sidelnikova, N.S.; Puzikov, V.M.; Skryshevskii, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying ...
  • Growth kinetics of PbS nanocrystals in organo-metallic Langmuir-Blodgett films studied by optical absorption spectroscopy 
    Savin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Formation and growth of lead sulfide nanocrystals in lead stearate Langmuir-Blodgett (LB) films are investigated using the optical absorption spectroscopy method. The kinetics of changes in the concentration of lead ions ...
  • Growth of a KDP (KH₂PO₄) twin crystal and comparison of its characteristics with a single crystal 
    Javidi, S.; Esmaeil Nia, M.; Ali Akbari, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    KDP single and twin (prepared from two-glued seeds) crystals have been grown by the method of temperature reduction. Then, the grown crystals were cut and polished in the (100) direction for optical characterization. The ...
  • GSO: Ce³⁺ scintillator with a high energy resolution 
    Bondar, V.G.; Gavrilyuk, V.P.; Konevskii, V.S.; Krivonosov, E.V.; Martynov, V.P.; Savvin, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It is known that in case of registration of the scintillation light using photomultiplier energy resolution of the scintillation detector can be written as sum of three components, each of them is statistically independent ...

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