Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Localized hole states in La₂СиО₄₊δ
Репозиторій DSpace/Manakin
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Localized hole states in La₂СиО₄₊δ
Тема:
Специальный выпуск Международная конференция "Сверхпроводимость. Физические аспекты"
Посилання:
Localized hole states in La₂CuO₄₊δ / P. Rubin, A. Sherman // Физика низких температур. — 1996. — Т. 22, № 5. — С. 543-546. — Бібліогр.: 9 назв. — англ.
Підтримка:
This work was supported by the Estonian Science Foundation under Grants ETF-67 and ETF-349.
Дата:
1996
Переглядів:
346
Завантажень:
175
Анотація:
Bound hole states induced by excess oxygen in La₂СиО₄₊δ are studied in the framework of the extended Hubbard model with the use of the spin-wave approximation. It is shown that the bound states are subdivided into two groups connected with different perturbations introduced by the excess oxygen in an antiferromagnetically ordered crystal. We interpret the two-band structure of the impurity reflectivity spectrum as a manifestation of these two groups of bound states. Calculated binding energies are in agreement with experiment.
