High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

Terekhin, M.A. ; Svechnikov, N.Yu. ; Tanaka, S. ; Hirose, S. ; Kamada, M.

Тема: Письма редактору

Інший ID: PACS: 73.20.Dx

URI: http://dspace.nbuv.gov.ua/handle/123456789/175116

Посилання: High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature / М.А. Terekhin, N.Yu. Svechnikov, S. Tanaka, S. Hirose, and М. Кamada // Физика низких температур. — 1997. — Т. 23, № 4. — С. 473-475. — Бібліогр.: 12 назв. — англ.

Підтримка: One of the authors (М.А.Т.) acknowledges the financial support of а Grant-in-Aid for Encouragement of Young Scientists of Russian Research Centre "Kurchatov Institute".

Дата: 1997

Завантажень: 284

High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

Анотація:

The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer.

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