High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature

dc.contributor.author	Terekhin, M.A.
dc.contributor.author	Svechnikov, N.Yu.
dc.contributor.author	Tanaka, S.
dc.contributor.author	Hirose, S.
dc.contributor.author	Kamada, M.
dc.date.accessioned	2021-01-30T16:27:46Z
dc.date.available	2021-01-30T16:27:46Z
dc.date.issued	1997
dc.identifier.citation	High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature / М.А. Terekhin, N.Yu. Svechnikov, S. Tanaka, S. Hirose, and М. Кamada // Физика низких температур. — 1997. — Т. 23, № 4. — С. 473-475. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 73.20.Dx
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/175116
dc.description.abstract	The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF₂ crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Förster mechanism energy transfer.	uk_UA
dc.description.sponsorship	One of the authors (М.А.Т.) acknowledges the financial support of а Grant-in-Aid for Encouragement of Young Scientists of Russian Research Centre "Kurchatov Institute".	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Письма редактору
dc.title	High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF₂ at low temperature	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA