Посилання:Activation spectroscopy of electronically induced defects in solid Ne / O.N. Grigorashchenko, V.V. Rudenkov, I.V. Khizhnyi, E.V. Savchenko, M. Frankowski, A.M. Smith-Gicklhorn, M.K. Beyer, V.E. Bondybey // Физика низких температур. — 2003. — Т. 29, № 9-10. — С. 1147-1151. — Бібліогр.: 20 назв. — англ.
Підтримка:We thank Profs. K.S. Song and G. Zimmerer for valuable discussions. Financial support from the Deutsche Forschungsgemeinschaft through the program «Förderung der wissenschaftlichen Beziehungen deutscher Wissenschaftler zu Wissenschaftlern in Ländern Mittel- und Osteuropas sowie Ländern der vormaligen UdSSR» is gratefully acknowledged.
Thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) methods were used in combination with cathodoluminescence to probe electronically induced defects in solid Ne. The defects were generated by a low energy electron beam. For spectroscopic study we used Ar* centers in Ne matrix as a model system. At a temperature of 10.5 K a sharp decrease in the intensity of "defect" components in the luminescence spectrum was observed. From the analysis of the corresponding peak in the TSL and TSEE yields the trap depth energy was estimated and compared with available theoretical calculations. The obtained data support the model suggested by Song, that stable electronically induced defects have the configuration of second-neighbour Frenkel pairs.