Amphoteric center of luminescence in CdS

dc.contributor.author	Artem'jeva, O. O.
dc.contributor.author	Vakulenko, O. V.
dc.contributor.author	Dacenko, O. I.
dc.date.accessioned	2017-06-15T03:51:00Z
dc.date.available	2017-06-15T03:51:00Z
dc.date.issued	2005
dc.identifier.citation	Amphoteric center of luminescence in CdS / O. O. Artem'jeva, O. V. Vakulenko, O. I. Dacenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 58-60. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 71.55.Gs, 78.55.Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121645
dc.description.abstract	The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak between 100 and 150 K. Both these bands are associated with emission of the center based on the VCd-type intrinsic point defect. The results can be explained within the framework of the theory of amphoteric centers of charge carrier recombination.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Amphoteric center of luminescence in CdS	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA