Noise induced re-entrant transitions in exciton bistable system

dc.contributor.author	Gudyma, Yu.
dc.contributor.author	Ivans'kii, B.
dc.contributor.author	Semenko, O.
dc.date.accessioned	2017-06-14T17:12:48Z
dc.date.available	2017-06-14T17:12:48Z
dc.date.issued	2006
dc.identifier.citation	Noise induced re-entrant transitions in exciton bistable system / Yu. Gudyma, B. Ivans'kii, O. Semenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 88-92. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 05.40.-a, 78.40.Fy, 42.65.Pc
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121581
dc.description.abstract	We study a re-entrant transition in an exciton bistable system under the influence of multiplicative noise. The re-entrant behavior is predictable for specific values of the system control parameter when increasing the multiplicative noise intensity. The system of Wannier-Mott excitons exhibits bistable ↔ monostable transitions in a window of intermediate amplitudes of the multiplicative noise intensity demonstrating its destructive and constructive role.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Noise induced re-entrant transitions in exciton bistable system	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA