Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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dc.contributor.author	Abouelaoualim, D.
dc.date.accessioned	2017-06-14T16:44:30Z
dc.date.available	2017-06-14T16:44:30Z
dc.date.issued	2005
dc.identifier.citation	Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.20.-b, 73.21.Cd
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121558
dc.description.abstract	We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA