Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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dc.contributor.author	Tagiyev, B.G.
dc.contributor.author	Madatov, R.S.
dc.contributor.author	Aydayev, F.Sh.
dc.contributor.author	Abbasova, T.M.
dc.date.accessioned	2017-06-13T17:14:12Z
dc.date.available	2017-06-13T17:14:12Z
dc.date.issued	2002
dc.identifier.citation	Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.80.-r, 78.60.Fi
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121236
dc.description.abstract	The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA