Pre- and postmelting of cadmium telluride

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
→
Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4
→
Переглянути статтю

dc.contributor.author	Shcherbak, L.P.
dc.contributor.author	Feichouk, P.I.
dc.contributor.author	Plevachouk, Yu.A.
dc.contributor.author	Kopach, O.V.
dc.contributor.author	Turyanska, L.T.
dc.date.accessioned	2017-06-11T14:09:57Z
dc.date.available	2017-06-11T14:09:57Z
dc.date.issued	1999
dc.identifier.citation	Pre- and postmelting of cadmium telluride / L.P. Shcherbak, P.I. Feichouk, Yu.A. Plevachouk, O.V. Kopach, L.T. Turyanska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 76-80. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.20, 72.80.P
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120258
dc.description.abstract	A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal analysis the parameters of CdTe melting are determined by the premelting processes that are related to defect production in crystal lattice. The crystallization processes are controlled with the melt state (structure) that depends on its maximum temperature.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Pre- and postmelting of cadmium telluride	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA