Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1
→
Переглянути статтю

dc.contributor.author	Klimovskaya, A.I.
dc.contributor.author	Grigor’ev, N.N.
dc.contributor.author	Gule, E.G.
dc.contributor.author	Dryha, Yu.A.
dc.contributor.author	Litovchenko, V.G.
dc.date.accessioned	2017-06-07T12:28:25Z
dc.date.available	2017-06-07T12:28:25Z
dc.date.issued	2002
dc.identifier.citation	Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs / A.I. Klimovskaya, N.N. Grigor’ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 42-45. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 78.55.Cr, 78.67.De, 85.35.Be
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119565
dc.description.abstract	InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA