Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates

dc.contributor.author	Tkach, V.N.
dc.date.accessioned	2017-06-07T12:24:52Z
dc.date.available	2017-06-07T12:24:52Z
dc.date.issued	2002
dc.identifier.citation	Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.10.N, 61.66, 68.35.B
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119563
dc.description.abstract	A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA