Influence of structural defects on photoconductivity of zinc diphosphide

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3
→
Переглянути статтю

dc.contributor.author	Kudin, A.P.
dc.contributor.author	Kuts, V.I.
dc.contributor.author	Litovchenko, P.G.
dc.contributor.author	Pinkovska, M.B.
dc.contributor.author	Tartachnyk, V.P.
dc.date.accessioned	2017-06-05T17:08:56Z
dc.date.available	2017-06-05T17:08:56Z
dc.date.issued	2001
dc.identifier.citation	Influence of structural defects on photoconductivity of zinc diphosphide / A.P. Kudin, V.I. Kuts, P.G. Litovchenko, M.B. Pinkovska, V.P. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 156-159. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119264
dc.description.abstract	Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects existing in initial crystals. Complex defects appearing during high temperature treatment (400oC) form band hn = 1.55-2.14 eV. Irradiation leads to the decrease of dark current and appearing of acceptor type level which can be annealed in the temperature interval 20-100⁰C.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of structural defects on photoconductivity of zinc diphosphide	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA