Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2
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dc.contributor.author	Lysenko, V.S.
dc.contributor.author	Tyagulski, I.P.
dc.contributor.author	Gomeniuk, Y.V.
dc.contributor.author	Osiyuk, I.N.
dc.date.accessioned	2017-06-05T16:19:41Z
dc.date.available	2017-06-05T16:19:41Z
dc.date.issued	2001
dc.identifier.citation	Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 75-81. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 68.35, 72.20.J, 73.20, 73.40,85.30.T
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119246
dc.description.abstract	Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the prekink region. Thermally activated emptying of these traps leads to the sharp decrease of the current in the subthreshold mode of transistor operation	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA