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dc.contributor.author |
Karachevtseva, L.A. |
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dc.contributor.author |
Lytvynenko, O.A. |
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dc.contributor.author |
Malovichko, E.A. |
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dc.contributor.author |
Sobolev, V.D. |
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dc.contributor.author |
Stronska, O.J. |
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dc.date.accessioned |
2017-06-05T15:59:59Z |
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dc.date.available |
2017-06-05T15:59:59Z |
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dc.date.issued |
2001 |
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dc.identifier.citation |
Electrical properties of macroporous silicon structures / L.A. Karachevtseva, O.A. Lytvynenko, E.A. Malovichko, V.D. Sobolev, O.J. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 40-43. — Бібліогр.: 11 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 71.25.Rk, 81.60.Cp |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119238 |
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dc.description.abstract |
The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures of macroporous silicon, and also in a matrix of macroporous layers have a maximum for a macropore volume of V = 0.3-0.4. Thus the electron mobility decreases monotonically. The experimental results were explained by a model based on the existence of electron-enriched regions around pores, with thickness ΔD ≈ 1 mm formed after electrochemical and chemical treatment of the macropore walls. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Electrical properties of macroporous silicon structures |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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