ЗМІСТ

Baranskii P.I., Babich V.M., Venger E.F.
Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

Freik D.M., Ruvinskii M.A., Ruvinskii B.M., Galushchak M.A.
Crystallochemistry of defects in lead telluride films

Serdega B.K., Nikitenko E.V., Prikhodenko V.I.
Effect of surface condition on strain in semiconductor crystal sample

Kirillova S.I., Primachenko V.E., Venger E.F., Chernobai V.A.
Electronic properties of silicon surface at different oxide film conditions

Lytvyn O.S., Khomchenko V.S., Kryshtab T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov Yu.A.
Structural investigations of annealed ZnS:Cu, Ga film phosphors

Monastyrskii L.S.
Features of electrical charge transfer in porous silicon

Nesterenko B.O., Kazantseva Z.I., Stadnyk O.A., De Rossi D., Kalchenko V.I.
Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films

Korovin A.V.
Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well

Karachevtseva L.A., Lytvynenko O.A., Malovichko E.A., Sobolev V.D., Stronska O.J.
Electrical properties of macroporous silicon structures

Rozhin A.G., Klyui N.I., Litovchenko V.G., Melnik V.P., Romanyuk B.N., Piryatinskii Yu.P.
Activation of porous Si blue emission due to preanodization ion implantation

Vlasenko N.A., Kononets Ya.F., Denisova Z.L., Kopytko Yu.V., Veligura L.I., Soininen El., Tornqvist R.O., Vasama K.M.
Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

Snopok B.A., Kostyukevich K.V., Lysenko S.I., Lytvyn P.M., Lytvyn O.S., Mamykin S.V., Zynyo S.A., Shepelyavyj P.E., Kostyukevich S.A., Shirshov Yu.M., Venger E.F.
Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters

Kostyukevych S.A., Moskalenko N.L., Shepeliavyi P.E., Girnyk V.I., Tverdokhleb I.V., Ivanovsky A.A.
Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices