Accurate numerical modelling the GaAs MESFET current-voltage characteristics

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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dc.contributor.author	Merabtine, N.
dc.contributor.author	Khemissi, S.
dc.contributor.author	Zaabat, M.
dc.contributor.author	Belgat, M.
dc.contributor.author	Kenzai, C.
dc.date.accessioned	2017-06-05T09:20:44Z
dc.date.available	2017-06-05T09:20:44Z
dc.date.issued	2004
dc.identifier.citation	Accurate numerical modelling the GaAs MESFET current-voltage characteristics / N. Merabtine, S. Khemissi, M. Zaabat, M. Belgat, C. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 389-394. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 85.30.Tv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119205
dc.description.abstract	In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Accurate numerical modelling the GaAs MESFET current-voltage characteristics	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA