Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 3
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Javidi, S. | |
| dc.contributor.author | Faripour, H. | |
| dc.contributor.author | Esmaeil Nia, M. | |
| dc.contributor.author | Sepehri, K.F. | |
| dc.contributor.author | Ali Akbari, N. | |
| dc.date.accessioned | 2017-06-03T04:50:29Z | |
| dc.date.available | 2017-06-03T04:50:29Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals / S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 248-251. — Бібліогр.: 15 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 42.70.Mp, 77.84.Fa, 81.10.Dn | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119058 | |
| dc.description.abstract | A solution growth system has been built based on temperature reduction method [1]. A few KDP crystals were grown by the system up to 160×40×38 mm dimensions. Spectrophotometer transmission spectra from (100) planes of the grown crystals show about 86 % transmission in the visible region. XRD analysis, laser damage threshold, and microhardness of the crystals were determined. The etching behavior of surface features of grown KDP single crystals was studied in different etchants. | uk_UA |
| dc.description.sponsorship | The authors are indebted to Dr. M. Maleki for his helpful advices concerning the reviewing of this article, they also wish to thank V. Faghihi on aspects of the laser damage threshold experiment, Z. Dorriz for providing spectral curve, N. Afshari for providing XRD curve, H. Kalbasi for making microhardeness testing, and workshop personnel for their technical assistance. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Development of a KDP crystal growth system based on TRM and characterization of the grown crystals | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
