Посилання:Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ.
Підтримка:The authors are very grateful to the specialists from the
Institute for information recording problems, NAS of
Ukraine, who assisted in optical information recording
on these optical carriers and organized their long-term
storage, as well as to the specialists from V. Lashkaryov
Institute of Semiconductor Physics for the performed
studying the pit profiles by using the scanning tunnel
microscope
Performed in this paper is the analysis of possibilities to create optical
information carriers for long-term information storage. Adduced are the results of
experimental investigations of properties inherent to optical carriers of the WORM type
after 25-year storage. It has been shown that their micro-relief structure formed by using
focused laser radiation on thin films of chalcogenide vitreous semiconductors had not
been practically changed after storing them for the above mentioned period in non-heated
areas.