Analysis of properties of optical carriers after long-term storage

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
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dc.contributor.author	Petrov, V.V.
dc.contributor.author	Kryuchyn, A.A.
dc.contributor.author	Gorbov, I.V.
dc.contributor.author	Kossko, I.O.
dc.contributor.author	Kostyukevych, S.O.
dc.date.accessioned	2017-05-31T19:06:30Z
dc.date.available	2017-05-31T19:06:30Z
dc.date.issued	2009
dc.identifier.citation	Analysis of properties of optical carriers after long-term storage / V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 399-402. — Бібліогр.: 11 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 42.79.Vb, 78.66.Jg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118843
dc.description.abstract	Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical carriers of the WORM type after 25-year storage. It has been shown that their micro-relief structure formed by using focused laser radiation on thin films of chalcogenide vitreous semiconductors had not been practically changed after storing them for the above mentioned period in non-heated areas.	uk_UA
dc.description.sponsorship	The authors are very grateful to the specialists from the Institute for information recording problems, NAS of Ukraine, who assisted in optical information recording on these optical carriers and organized their long-term storage, as well as to the specialists from V. Lashkaryov Institute of Semiconductor Physics for the performed studying the pit profiles by using the scanning tunnel microscope	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Analysis of properties of optical carriers after long-term storage	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA