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періодичних видань НАН України
періодичних видань НАН України
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001)
Репозиторій DSpace/Manakin
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Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001)
Тема:
Тонкие пленки
Інший ID:
PACS: 62.23.Eg, 68.35.B–, 68.37.Ef, 73.40.–c
Посилання:
Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001) / V.A. Gasparov // Физика низких температур. — 2011. — Т. 37, № 9-10. — С. 1073–1084. — Бібліогр.: 23 назв. — англ.
Підтримка:
I wish to thank Wo. Richter for hospitality during stay in FSU-Jena and cooperation, M. Riehl-Chudoba and B. Schröter, for providing invaluable assistance, F. Bechstedt, R.M. Feenstra, M. Grioni, L.S.O. Johansson, G. Margaritondo, W.-D. Schneider and J.-M. Themlin, for helpful discussions. This work has been supported by the DFG grants [No. RI 650/4–1, No. 436RUS 113/112/D, SFB 196], the Russian Foundation of Basic Research grants [No. 96–02–17532], the Russian Scientific Program: Surface Atomic Structures [Grants No. 95–2.1, No. 4.10.99], RAS Program: New Materials and Structures (Grant 4.13 and B.7) and the Russian State Program of support of leading scientific schools (1160.2008.2).
Дата:
2011
Переглядів:
514
Завантажень:
201
Анотація:
Surface topographic (LEED, STM) and spectroscopic (ARUPS, XPS, STS) studies have been performed on the Si-terminated 6H-SiC(0001)-(3×3) surface and Ag superstructures and ultrathin films on Si(001) and Si(111) surfaces, using a scanning tunneling microscope (STM) in ultrahigh vacuum. Our results confirm that a 2D epitaxial metal growth is favored on Si(001) at low temperatures and a solid, two-domain Ag(111) film has been achieved at coverage’s as low as 10 ML. We have found that the films reveal a morphology with 3-dimensional features and with well defined honeycomb structure in between. An atomically flat Si(111)/Ag-(√3̅×√3̅)R30° surface has been modified by use of a scanning tunneling microscope (STM) in ultrahigh vacuum (UHV). High quality 6H-SiC(0001)-(3×3) and Si(111)-Ag(√3̅×√3̅)R30° over structures have been prepared and studied by means of ARUPS, XPS and LEED. The local density of states proportional to the normalized differential conductivity (dI / dV )/(I / V ) vs V spectra show a distinct bands of empty (–0.6 eV) and filled (0.65 eV) sites separated by 1.2 eV, for both areas. The results support a Mott–Hubbard-type model as used for the calculation of the density of states of 6H-SiC(0001)-(3×3) surface with Hubbard gap 1 eV.
