Defect reorganization induced by pulsed magnetic field in porous InP

dc.contributor.author	Milenin, V.V.
dc.contributor.author	Red’ko, R.A.
dc.date.accessioned	2017-05-30T06:56:12Z
dc.date.available	2017-05-30T06:56:12Z
dc.date.issued	2010
dc.identifier.citation	Defect reorganization induced by pulsed magnetic field in porous InP / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 330-333. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.55.Mb
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118402
dc.description.abstract	We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination within the range 0.6 to 2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. A possible mechanism of observed transformation is discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Defect reorganization induced by pulsed magnetic field in porous InP	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA