Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 2
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dc.contributor.author	Okhrimenko, O.B.
dc.date.accessioned	2017-05-30T06:05:25Z
dc.date.available	2017-05-30T06:05:25Z
dc.date.issued	2014
dc.identifier.citation	Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.20.Nr, 78.40.Fy
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118373
dc.description.abstract	The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is shown that laser annealing on the above structures leads to changes in spectra of RS and optical transmission that can be explained within the critical action model. The value of critical action of laser radiation is determined for the structures studied.	uk_UA
dc.description.sponsorship	The author is indebted to Dr. Sci. Prof. V.P. Kladko and Dr. Sci. V.V. Strelchuk for their interest in this work and valuable discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA