Complex dielectric permittivity of (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3−0.9) superionic glasses and composites at 300 K were studied. A decrease of the real part of dielectric permittivity with frequency by almost five orders ...

We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters ...

Long-term transformations of the optical reflectance of GaAs epitaxial structure under weak magnetic field treatment (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) have been obtained. Optical measurements were performed ...

Quasi-periodic microstructures containing dislocations are formed on the surfaces of metals and semiconductors under irradiation with high-power femtosecond laser pulses. Interpretation of microstructures as a result of ...

The most used methods such as ion implantation, laser irradiation and nanosphere lithography for modification and creation of special microrelief of thin absorbing films on photosensitive substrates have been described. ...

We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient ...

Represented in this paper is the method and results of theoretical investigations aimed at the influence of spatial confinement effects, self-polarization of heterojunction planes as well as exciton-phonon interaction ...

The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, ...