Dislocation emission caused by different types of nanoscale deformation defects in CdTe

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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dc.contributor.author	Babentsov, V.N.
dc.contributor.author	Boyko, V.A.
dc.contributor.author	Gasan-zade, S.G.
dc.contributor.author	Shepelski, G.A.
dc.contributor.author	Stariy, S.V.
dc.date.accessioned	2017-05-30T05:40:07Z
dc.date.available	2017-05-30T05:40:07Z
dc.date.issued	2014
dc.identifier.citation	Dislocation emission caused by different types of nanoscale deformation defects in CdTe / V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 29-33. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.Ji, 61.72.Lk, 78.55.Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118357
dc.description.abstract	Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Dislocation emission caused by different types of nanoscale deformation defects in CdTe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA