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Photoelectrical properties of nanoporous silicon
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 3
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Photoelectrical properties of nanoporous silicon
Інший ID:
PACS 78.67.Rb, 77.55.df, 78.55.Mb
Посилання:
Photoelectrical properties of nanoporous silicon / A.I. Luchenko, K.V. Svezhentsova, M.M. Melnichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 298-301. — Бібліогр.: 9 назв. — англ.
Дата:
2012
Переглядів:
592
Завантажень:
317
Анотація:
The optimal composition of etchant solution and etching time for chemical
treatment to obtain nanoporous Si have been determined. Influence of nanocrystal
dimensions on the electrophysical and photoelectrical properties of heterojunctions has
been studied. The current-voltage characteristics of nanoporous Si with various
nanocrystal dimensions were measured. It was ascertained that lux-ampere characteristics
have a linear range and sublinear one, which almost reaches the asymptote at the
intensity of light above 10,000 lux. Nanoporous Si on the substrate of Si single-crystal
has increased sensitivity to the humidity in comparison with that of metallurgical Si. The
obtained results can be applied for development of highly sensitive sensors of humidity
