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dc.contributor.author Luchenko, A.I.
dc.contributor.author Svezhentsova, K.V.
dc.contributor.author Melnichenko, M.M.
dc.date.accessioned 2017-05-29T18:07:39Z
dc.date.available 2017-05-29T18:07:39Z
dc.date.issued 2012
dc.identifier.citation Photoelectrical properties of nanoporous silicon / A.I. Luchenko, K.V. Svezhentsova, M.M. Melnichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 298-301. — Бібліогр.: 9 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.67.Rb, 77.55.df, 78.55.Mb
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118327
dc.description.abstract The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties of heterojunctions has been studied. The current-voltage characteristics of nanoporous Si with various nanocrystal dimensions were measured. It was ascertained that lux-ampere characteristics have a linear range and sublinear one, which almost reaches the asymptote at the intensity of light above 10,000 lux. Nanoporous Si on the substrate of Si single-crystal has increased sensitivity to the humidity in comparison with that of metallurgical Si. The obtained results can be applied for development of highly sensitive sensors of humidity uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Photoelectrical properties of nanoporous silicon uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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