Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 3
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Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

Rubish, V.M. ; Kozusenok, O.V. ; Shtets, P.P. ; Marjan, V.M. ; Gera, E.V. ; Tarnaj, A.A.

Інший ID: PACS 78.20.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/118326

Посилання: Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ.

Підтримка: This work was in part supported by Science and Technology Center in Ukraine (project No.5208).

Дата: 2012

Завантажень: 332

Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method

Анотація:

The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed.

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