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dc.contributor.author |
Rubish, V.M. |
|
dc.contributor.author |
Kozusenok, O.V. |
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dc.contributor.author |
Shtets, P.P. |
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dc.contributor.author |
Marjan, V.M. |
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dc.contributor.author |
Gera, E.V. |
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dc.contributor.author |
Tarnaj, A.A. |
|
dc.date.accessioned |
2017-05-29T18:06:30Z |
|
dc.date.available |
2017-05-29T18:06:30Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method / V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 294-297. — Бібліогр.: 11 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 78.20.-e |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118326 |
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dc.description.abstract |
The results of isothermal and nonisothermal crystallization investigations of
the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films
crystallization is accompanied by a sharp decrease in transmission. The phase structure
arising in the matrix of films during crystallization corresponds to the structure of
crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the
amorphous matrix is discussed. |
uk_UA |
dc.description.sponsorship |
This work was in part supported by Science and
Technology Center in Ukraine (project No.5208). |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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