Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2
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| dc.contributor.author | Sorokin, V.M. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Kudryk, Ya.Ya. | |
| dc.contributor.author | Zinovchuk, A.V. | |
| dc.contributor.author | Bigun, R.I. | |
| dc.contributor.author | Kudryk, R.Ya. | |
| dc.contributor.author | Shynkarenko, V.V. | |
| dc.date.accessioned | 2017-05-29T16:34:47Z | |
| dc.date.available | 2017-05-29T16:34:47Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 66.70.Df, 85.60.Jb | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118301 | |
| dc.description.abstract | We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug and LED chip are separated. | uk_UA |
| dc.description.sponsorship | This work is part of the project 31/4.2.3.1/1833 of the Government Scientific & Technical Target Program “Development and introduction of energy-saving LED light sources and illumination systems based on them”. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
