Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

Khotkevych, N.V. ; Kolesnichenko, Yu.A. ; van Ruitenbeek, J.M.

Тема: К 75-летию со дня рождения И. К. Янсона

Інший ID: PACS: 74.55.+v, 85.30.Hi, 73.50.–h

URI: http://dspace.nbuv.gov.ua/handle/123456789/118250

Посилання: Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2013. — Т. 39, № 3. — С. 384–389. — Бібліогр.: 24 назв. — англ.

Дата: 2013

Завантажень: 462

Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

Анотація:

We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering by a single defect in the vicinity of the surface is analyzed.

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