Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory

dc.contributor.author	Khotkevych, N.V.
dc.contributor.author	Kolesnichenko, Yu.A.
dc.contributor.author	van Ruitenbeek, J.M.
dc.date.accessioned	2017-05-29T14:01:47Z
dc.date.available	2017-05-29T14:01:47Z
dc.date.issued	2013
dc.identifier.citation	Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory / N.V. Khotkevych, Yu.A. Kolesnichenko, J.M. van Ruitenbeek // Физика низких температур. — 2013. — Т. 39, № 3. — С. 384–389. — Бібліогр.: 24 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 74.55.+v, 85.30.Hi, 73.50.–h
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118250
dc.description.abstract	We have found an asymptotically exact solution of the Schrödinger equation for electrons tunneling into surface states through an inhomogeneous barrier of large amplitude. Assuming an elliptic dispersion law for the charge carriers the “standing wave” pattern in the conductance of the system resulting from the electron scattering by a single defect in the vicinity of the surface is analyzed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	К 75-летию со дня рождения И. К. Янсона	uk_UA
dc.title	Electron tunneling into surface states through an inhomogeneous barrier: asymptotically exact solution of the problem and STM theory	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA